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  Datasheet File OCR Text:
 PR
IM EL
SURFACE MOUNT ULTRA LOW VF SILICON SCHOTTKY RECTIFIER TM TINY LEADLESS MODULE
Y CTLSH3-2M322HL AR IN
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH3-2M322HL is a high performance HiLoTM 3.0A Schottky rectifier designed for applications where small size and operational efficiency are the prime requirements. With a maximum power dissipation of 1.45W, and a very small package footprint (smaller than the SOT-23), this leadless package design is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages.
* HiLoTM Device Characteristics (High Current/Low VF) * Ultra Low Forward Voltage Drop (VF=0.35V Typ. @ 3.0A)
TLM322 CASE MARKING CODE: CBB
FEATURES:
* High Thermal Efficiency * Small TLM 2x2mm case * High Current (IF=3.0A)
APPLICATIONS:
* DC/DC Converters * Voltage Clamping * Protection Circuits MAXIMUM RATINGS: (TA=25C) Continuous Reverse Voltage Average Forward Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
ELECTRICAL CHARACTERISTICS PER DIODE: SYMBOL IR BVR VF VF VF VF VF CT TEST CONDITIONS
P
E R
IM L
VR IO
PD
IN
MIN 20
RY A
20 3.0 1.45 -65 to +150 86.2 TYP 2.0
* Battery Powered Portable Equipment
UNITS V A W* C C/W *
TJ, Tstg JA
(TA=25C unless otherwise noted) MAX 3.0 UNITS mA V 0.14 0.19 0.24 0.29 0.35 0.18 0.23 0.28 0.33 0.40 TBD V V V V V pF
VR=10V IR=5.0mA IF=100mA IF=500mA IF=1.0A IF=2.0A IF=3.0A
* FR-4 Epoxy PCB with copper mounting pad area of 21mm2.
R0 (6-January 2006)
Central
TM
Semiconductor Corp.
P
L RE
F SILICON SCHOTTKY RECTIFIER TM TINY LEADLESS MODULE
IM SURFACE MOUNT ULTRA LOW V
Y AR IN
CTLSH3-2M322HL
TLM322 CASE - MECHANICAL OUTLINE
Suggested mounting pad layout for maximum power dissipation (Dimensions in mm)
LEAD CODE: 1) Cathode 2) Anode 3) Anode MARKING CODE: CBB R0 (6-January 2006) For standard mounting refer to TLM322 Package Details


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